Electronics developer Qorvo has released a next-generation series of 1,200V Silicon Carbide (SiC) Field Effect Transistors (FETs) with what it states are industry-leading figures of merit in on-resistance. The UF4C/SC series of 1200V Gen 4 SiC FETs are suited for mainstream 800V bus architectures in onboard chargers for electric vehicles in addition to other applications.
Anup Bhalla, chief engineer, power devices, at UnitedSiC/Qorvo, said. “Expanding our 1,200V range with higher performance Gen4 options allows us to better serve the engineers who are moving their bus designs to 800V. In electric vehicles, this move to higher voltages is inevitable and these new devices, with four different RDS(on) classes, help designers select the best possible SiC choice for every design.”
All RDS(on) options (23, 30, 53 and 70 milliohm) are offered in the industry standard 4-lead kelvin source TO-247 package, providing cleaner switching at higher performance levels. The 53 and 70 milliohm devices are also available in the TO-247 3-lead package. The company states the parts have excellent reliability, based on the well-managed thermal performance, which is a result of an advanced silver-sinter die attach and advanced wafer-thinning process.
All 1,200V SiC FETs are included in FET-Jet Calculator, a free online design tool that allows for instant evaluation of efficiency, component losses and junction temperature rise of devices used in a wide variety of AC/DC and isolated/non-isolated DC/DC converter topologies. Single and paralleled devices may be compared under user-specified heat-sinking conditions to enable optimum solutions.