Technology company STMicroelectronics has added automotive-grade 600V/650V super-junction MOSFETs to its MDmesh DM9 AG series, specifically created for onboard chargers (OBCs) and DC-DC converter applications in vehicles. These silicon-based devices are designed for efficiency and ruggedness in hard- and soft-switching topologies.
These devices reportedly have an outstanding RDS(on) per die area and minimal gate charge, offering low energy losses and beneficial switching performance. Compared with previous generations, the latest series aims to ensure sharper switching with a tighter gate-source threshold voltage (VGS(th)) spread, to reduce turn-on and turn-off losses.
Further improvements in body-diode reverse recovery aim to enhance overall MOSFET ruggedness. The low reverse-recovery charge (Qrr) and fast recovery time (trr) also aim to make the devices suitable for phase-shift zero-voltage switching topologies.
The series offers through-hole and surface-mount packages to support compact designs with high power density and reliability. The TO-247 LL package facilitates easy design-in, while surface-mount packages like H2PAK-2, H2PAK-7, HU3PAK and ACEPACK SMIT enable bottom-side or topside cooling options
The first device in the series, STH60N099DM9-2AG, is a 27A AEC-Q101 qualified N-channel 600V MOSFET with 76mΩ typical RDS(on) in the H2PAK-2 package. ST plans to expand the family to cover a range of current ratings and RDS(on) values from 23mΩ to 150mΩ.
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