Onsemi has signed a collaboration agreement with Global Foundries (GF) to develop and manufacture next-generation gallium nitride (GaN) power devices, starting with 650V products built on GF’s 200mm enhancement-mode (eMode) GaN-on-silicon process.

The two companies state that the combination of GF’s GaN-on-Si technology with Onsemi’s silicon gate drivers, controllers and thermally enhanced packaging will deliver higher power density in smaller, more efficient power-conversion systems. Target markets include AI data centers and automotive, industrial and aerospace/defense applications, where rising power demand is colliding with tight space and thermal constraints.

Onsemi expects the first customer samples in the first half of 2026, with plans to ramp to volume production thereafter. Initial application targets include onboard chargers and DC-DC stages for electric vehicles; solar microinverters and energy storage systems; and motor drives across industrial and aerospace/defense platforms.

Beyond the initial 650V devices, Onsemi is hoping the agreement will form part of a broader GaN roadmap spanning lateral GaN across low-, medium- and high-voltage classes alongside ultra-high-voltage vertical GaN. The company says that higher-frequency switching will enable device simplification and improved efficiency, as well as opportunities for the development of bidirectional topologies and greater functional integration that will shorten design cycles and improve system efficiency.

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Fuji Electric has signed an agreement with Robert Bosch to collaborate on silicon carbide (SiC) power semiconductor modules for electric vehicles, focusing on mechanical package compatibility.

The companies plan to develop SiC power modules with matching outer dimensions and terminal positions, enabling either supplier’s module to be integrated into an inverter without mechanical redesign. Fuji Electric and Bosch say the approach is intended to shorten design cycles and enable customers to diversify sourcing while maintaining existing inverter specifications.

Alongside the module work, the partners also plan to jointly develop supporting application technologies, including guidance on cooler design and terminal connection methods, and to provide technical support to customers. The companies expect the initiative to strengthen supply chain resilience and support wider EV adoption.

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With the increasing electrification of vehicles worldwide, the demand for highly efficient, compact and reliable power systems continues to grow – not only in passenger cars but also in electric two-wheelers. Electric two-wheelers require special systems, such as HV-LV DC-DC converters for xEVs (electric vehicles and their variations) and traction inverters for electric two-wheelers.  Infineon Technologies has expanded its OptiMOS 6 portfolio with the Automotive 150 V MOSFET family, designed to meet the demanding requirements of modern electric vehicles (EVs).

The automotive MOSFET family offers two drain-source resistance levels across all device variants. All variants are rated for the 150V voltage class and deliver the lowest RDS(on) available in this class, reaching as low as 2.5mΩ. This enables minimal conduction losses and high efficiency. The tight distribution of the gate threshold voltage (VGS(th)) supports synchronization when multiple MOSFETs are used in parallel configurations, which is particularly relevant for high-power automotive systems. The devices also feature low switching losses up to high frequencies, allowing for highly efficient operation in fast-switching applications such as modern DC-DC converters. In terms of thermal performance, the variants achieve a thermal resistance as low as 0.4K/W. This significantly improves heat dissipation, reduces system-level cooling requirements and lowers associated expenses.

The devices are available in three package types that offer specific advantages. The TO-Leadless (TOLL) 10 x 12mm² enables a compact design. The 10 x 12mm² TOLG package is footprint-compatible with TOLL, with the additional feature of gullwing leads for high robustness against thermal-mechanical stress. Meanwhile, the 10 x 15mm² TOLT package features a top-side cooling concept that enables efficient heat dissipation on the system level, making it well-suited for thermally demanding applications in space-constrained environments.

Infineon’s OptiMOS 6 150 V MOSFETs are qualified by Infineon Automotive Quality and exceed the requirements of the AEC-Q101 standard. In addition, they are PPAP capable.

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Infineon Technologies has said that it will supply Rivian’s R2 platform with power modules for traction inverters. The R2 platform will use silicon carbide (SiC) and silicon (Si) modules from Infineon’s HybridPack Drive G2 family. Supply is expected to start in 2026. Additionally, Infineon will supply other products for the platform, including Aurix TC3x microcontrollers and Optireg power management ICs.

“We are committed to enhancing the performance and range of electric vehicles jointly with innovative automotive companies like Rivian,” said Stefan Obersriebnig, head of the product line for high-voltage modules in Infineon’s automotive division. “Our dedication to innovation and zero-defect quality has made us the preferred partner of the automotive industry. With our broad product portfolio, system expertise and manufacturing capabilities, we are a key enabler of emission-free, sustainable mobility.”

HybridPack Drive is Infineon’s power module family for electric vehicles.

Infineon is expanding its Kulim facility in Malaysia to establish a fabrication plant for 200mm silicon carbide (SiC) power semiconductors. The site will operate as part of the Infineon One Virtual Fab, which connects production processes and technologies across Kulim and Villach in Austria to support scalable and efficient manufacturing of wide-bandgap (WBG) semiconductors, including SiC and gallium nitride (GaN).

Cissoid, a semiconductor solutions company, and Edag Group, an independent engineering services provider for the automotive industry, have announced a strategic partnership to accelerate the development of next-generation silicon carbide (SiC) traction inverters for electric mobility applications.

The companies aim to bring together Cissoid’s expertise in SiC power semiconductor modules and control solutions with Edag’s engineering in the design, integration and validation of electric powertrains. They plan to provide e-mobility OEMs and equipment suppliers with technical support and complete solutions for the efficient, reliable and functionally safe development of SiC-based traction inverters. This will include engineering services covering inverter system design, thermal management, mechanical integration, functional safety and EMC compliance, as well as end-to-end technical support, from concept design to prototyping and vehicle integration.

Pierre Delatte, CTO of Cissoid, stated, “This partnership with Edag enables us to jointly address the growing demand for high-performance, SiC-based traction inverters. Together, we will help manufacturers harness the full potential of silicon carbide technology, making electric vehicles more efficient, compact and reliable.”

Lennart Benthele, head of drivetrain and thermal development at Edag, added, “At Edag, we are committed to shaping the future of sustainable mobility. By partnering with Cissoid, we expand our capabilities in power electronics, offering our customers integrated solutions for the next generation of electric drivetrains.”

In related news, Hyperdrives, an electric motor technology company, recently chose Cissoid’s silicon carbide (SiC) inverter control modules (ICMs) to power its hollow-conductor-cooled electric motors. Click here to read the full story. 

Intelligent power and sensing technology provider onsemi and BorgWarner are expanding their strategic collaboration for silicon carbide (SiC), now making the total agreement worth more than US$1bn in lifetime value.

Plans revealed by BorgWarner will see the company integrate the onsemi EliteSiC 1200V and 750V power devices into its Viper power modules. The EliteSiC devices will form part of onsemi’s product range.

“First and foremost, onsemi’s continuous and strategic investment in ramping SiC manufacturing capacity across its end-to-end supply chain gives us confidence in our ability to support the increasing demand for our solutions, now and in the future,” commented Stefan Demmerle, vice president of BorgWarner and president and general manager, PowerDrive Systems.

Despite BorgWarner’s silicon carbide traction inverters already benefitting from a higher efficiency, enhanced cooling performance and faster charging rates in a more compact package than other EV options, it is anticipated that through the use of the EliteSiC technology, the company’s solutions will benefit from increased power density and higher efficiency, resulting in increased range and performance.

“The integration of EliteSiC technology in the traction inverter enables increased gas-equivalent miles per gallon (MPGe), which helps alleviate range anxiety – one of the key barriers to EV adoption,” said Simon Keeton, executive vice president and general manager, Power Solutions Group, onsemi. “With onsemi’s chip-to-system level support and a track record of execution, we are able to provide industry-leading SiC-based solutions to BorgWarner at an accelerated pace to support its go-to-market requirements.”