Onsemi has signed a collaboration agreement with Global Foundries (GF) to develop and manufacture next-generation gallium nitride (GaN) power devices, starting with 650V products built on GF’s 200mm enhancement-mode (eMode) GaN-on-silicon process.
The two companies state that the combination of GF’s GaN-on-Si technology with Onsemi’s silicon gate drivers, controllers and thermally enhanced packaging will deliver higher power density in smaller, more efficient power-conversion systems. Target markets include AI data centers and automotive, industrial and aerospace/defense applications, where rising power demand is colliding with tight space and thermal constraints.
Onsemi expects the first customer samples in the first half of 2026, with plans to ramp to volume production thereafter. Initial application targets include onboard chargers and DC-DC stages for electric vehicles; solar microinverters and energy storage systems; and motor drives across industrial and aerospace/defense platforms.
Beyond the initial 650V devices, Onsemi is hoping the agreement will form part of a broader GaN roadmap spanning lateral GaN across low-, medium- and high-voltage classes alongside ultra-high-voltage vertical GaN. The company says that higher-frequency switching will enable device simplification and improved efficiency, as well as opportunities for the development of bidirectional topologies and greater functional integration that will shorten design cycles and improve system efficiency.
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