STMicroelectronics has launched its fourth-generation STPower silicon carbide MOSFET technology, which establishes “new benchmarks in power efficiency, power density and robustness”, according to the company. Although the MOSFET is suited to the needs of both automotive and industrial markets, it is particularly optimized for traction inverters, the key component of EV powertrains.
“STMicroelectronics is committed to driving the future of electric mobility and industrial efficiency through our cutting-edge silicon carbide technology. We continue to advance SiC MOSFET technology with innovations in the device, advanced packages and power modules,” said Marco Cassis, president, analog, power and discrete, MEMS and Sensors group.
This latest generation SiC devices are designed to benefit future EV traction inverter platforms; 800V EV bus drive systems based on SiC have enabled faster charging and reduced EV weight, enabling car makers to produce vehicles with longer driving range. ST’s new SiC MOSFETs, which will be made available in 750V and 1,200V classes, will improve energy efficiency and performance of both 400V and 800V EV bus traction inverters, bringing the advantages of SiC to even mid-size and compact EVs.
The new generation SiC technology is also suitable for a variety of high-power industrial applications, including solar inverters, energy storage solutions and data centers.
Commercial availability of devices with nominal voltage ratings of 750V and 1,200V will begin in 2025. STMicroelectronics states that the fourth generation SiC MOSFETs represents a significant leap forward in power conversion technology compared to previous generations.
ST has already supplied STPOWER SiC devices for more than five million passenger cars worldwide in a range of EV applications.
