VisIC Technologies has had a decade of experience in creating, developing, and advancing concepts based on cutting-edge Gallium Nitride (GaN) on silicon technology. Our patented D3GaN technology addresses the automotive industry's needs in terms of cost, supply, sustainability, reliability, quality, and performance.
We named our technology D3GaN, which stands for Direct Drive D-mode GaN, emphasizing the core technology and all its benefits. We develop solutions that help reduce energy waste in power conversion systems, with a focus on the automotive electrical battery vehicle (BEV).
With our D3GaN technology, the CO2 footprint can be reduced by over 1.4t over the lifecycle of a BEV, by improving the efficiency of the inverter, over silicon solutions. The technology is designed for the highest reliability, as it uses the widest gate voltage which can withstand the harsh gate voltage stress induced by the inductive design of the inverter application. With this solution, BEV can save 50% on power losses over the driving cycle of the electric car, thus reducing battery cost and increasing driving range and performance. This solution also reduces the cooling system requirements, as well as the size of the BEV inverter.
The D3GaN devices support 400-volt and 800-volt bus systems, commonly used in today's electronic car models. The D3GaN technology also allows easy and simple paralleling, a critical feature for an inverter, and features state-of-art packaging for reliable power dissipation.
VisIC Technologies has produced the first GaN-based transistors used in automotive inverters. By utilizing the GaN on Silicon technology, we address the supply chain concern as we are using existing semiconductor high-volume production lines, which can scale from 150 to 200mm and further to 300mm wafer size, of the existing cost base material of Silicon.